Quote for Part 242829-023 (Microcircuit Memory) by Bae Systems Information And Electronic Systems Integration I with NSN 5962-01-168-5844

Mfg Part Number: 242829-023	Alternate P/N: 242829023	NSN : 5962-01-168-5844
NIIN : 011685844	CAGE Code : 81413	Manufacturer: Bae Systems Information And Electronic Systems Integration I
Item Name : Microcircuit Memory	FSC : 5962 Microcircuits Electronic

Integrated AOG is your sourcing solution for all your NSN part 242829-023 under 5962 Microcircuits Electronic needs, presenting NSN 5962-01-168-5844 by Bae Systems Information And Electronic Systems Integration I at competitive prices. This Microcircuit Memory NSN item is listed alongside the part number 242829-023, and it is readily available for purchase from our website at any time. If you would like to learn more about this item and receive a customized quote for your comparisons, fill out and submit an RFQ form as provided on our website at your earliest convenience. Please be sure to let us know details such as your target price and expected shipping time as this will allow us to tailor the best solution for your needs. With team members available for customer needs around the clock, we promise responses to quote requests within 15 minutes of receiving a completed form.

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NSN Information for Part Number 242829-023 with NSN 5962-01-168-5844, 5962011685844

NSN	FSC	NIIN	CLS	Hazmat	DEMIL	Cancelled NSN
5962-01-168-5844 Item Description: Microcircuit Memory	5962	011685844	0	N	B
	CIIC	HCC	ESD	PMIC	Criticality	ENAC
	U		B	A	0
Part Number	ISC	RNVC	RNCC	HCC	MSDS	SADC
242829-023	2	2	3

Characteristics Data of NSN 5962-01-168-5844, 5962011685844

MRC	Criteria	Characteristic
MEMORY	ADAQ	BODY LENGTH0 960 INCHES MAXIMUM
MEMORY	ADAT	BODY WIDTH0 220 INCHES MINIMUM AND 0 310 INCHES MAXIMUM
MEMORY	ADAU	BODY HEIGHT0 185 INCHES MAXIMUM
MEMORY	AEHX	MAXIMUM POWER DISSIPATION RATING715 0 MILLIWATTS
MEMORY	AFGA	OPERATING TEMP RANGE-55 0125 0 DEG CELSIUS
MEMORY	AFJQ	STORAGE TEMP RANGE-65 0150 0 DEG CELSIUS
MEMORY	CBBL	FEATURES PROVIDEDMONOLITHIC AND BIPOLAR AND PROGRAMMABLE AND SCHOTTKY
MEMORY	CQSJ	INCLOSURE MATERIALCERAMIC
MEMORY	CQSZ	INCLOSURE CONFIGURATIONDUAL-IN-LINE
MEMORY	CQWX	OUTPUT LOGIC FORMTRANSISTOR-TRANSISTOR LOGIC
MEMORY	CQZP	INPUT CIRCUIT PATTERN12 INPUT
MEMORY	CTFT	CASE OUTLINE SOURCE AND DESIGNATORD-6 MIL-M-38510
MEMORY	CWSG	TERMINAL SURFACE TREATMENTSOLDER
MEMORY	CZEN	VOLTAGE RATING AND TYPE PER CHARACTERISTIC-0 5 VOLTS MINIMUM POWER SOURCE AND 7 0 VOLTS MAXIMUM POWER SOURCE
MEMORY	CZEQ	TIME RATING PER CHACTERISTIC125 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME LOW TO HIGH LEVEL OUTPUT AND 125 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME HIGH TO LOW LEVEL OUTPUT
MEMORY	CZER	MEMORY DEVICE TYPEROM
MEMORY	TEST	TEST DATA DOCUMENT81349-MIL-M-38510 SPECIFICATION INCLUDES ENGINEERING TYPE BULLETINS BROCHURESETC THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT EXCLUDES COMMERCIAL CATALOGS INDUSTRY DIRECTORIES AND SIMILAR TRADE PUBLICATIONS REFLECTI
MEMORY	TTQY	TERMINAL TYPE AND QUANTITY18 PRINTED CIRCUIT