Quote for Part 914595-1 (Microcircuit Memory) by Bae Systems Information And Electronic Systems Integration Inc with NSN 5962-01-249-8316

Mfg Part Number: 914595-1	Alternate P/N: 9145951	NSN : 5962-01-249-8316
NIIN : 012498316	CAGE Code : 80249	Manufacturer: Bae Systems Information And Electronic Systems Integration Inc
Item Name : Microcircuit Memory	FSC : 5962 Microcircuits Electronic

Integrated AOG is your sourcing solution for all your NSN part 914595-1 under 5962 Microcircuits Electronic needs, presenting NSN 5962-01-249-8316 by Bae Systems Information And Electronic Systems Integration Inc at competitive prices. This Microcircuit Memory NSN item is listed alongside the part number 914595-1, and it is readily available for purchase from our website at any time. If you would like to learn more about this item and receive a customized quote for your comparisons, fill out and submit an RFQ form as provided on our website at your earliest convenience. Please be sure to let us know details such as your target price and expected shipping time as this will allow us to tailor the best solution for your needs. With team members available for customer needs around the clock, we promise responses to quote requests within 15 minutes of receiving a completed form.

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NSN Information for Part Number 914595-1 with NSN 5962-01-249-8316, 5962012498316

NSN	FSC	NIIN	CLS	Hazmat	DEMIL	Cancelled NSN
5962-01-249-8316 Item Description: Microcircuit Memory	5962	012498316	0	N	D
	CIIC	HCC	ESD	PMIC	Criticality	ENAC
	U			A	0
Part Number	ISC	RNVC	RNCC	HCC	MSDS	SADC
914595-1	2	1	5

Characteristics Data of NSN 5962-01-249-8316, 5962012498316

MRC	Criteria	Characteristic
MEMORY	ADAQ	BODY LENGTH1 060 INCHES MAXIMUM
MEMORY	ADAT	BODY WIDTH0 220 INCHES MINIMUM AND 0 310 INCHES MAXIMUM
MEMORY	ADAU	BODY HEIGHT0 185 INCHES MAXIMUM
MEMORY	AEHX	MAXIMUM POWER DISSIPATION RATING1 2 WATTS
MEMORY	AFGA	OPERATING TEMP RANGE-55 0125 0 DEG CELSIUS
MEMORY	AFJQ	STORAGE TEMP RANGE-65 0150 0 DEG CELSIUS
MEMORY	CBBL	FEATURES PROVIDEDHERMETICALLY SEALED AND BURN IN AND MONOLITHIC AND STATIC OPERATION
MEMORY	CQSJ	INCLOSURE MATERIALCERAMIC
MEMORY	CQSZ	INCLOSURE CONFIGURATIONDUAL-IN-LINE
MEMORY	CQWX	OUTPUT LOGIC FORMN-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC
MEMORY	CQZP	INPUT CIRCUIT PATTERN17 INPUT
MEMORY	CTFT	CASE OUTLINE SOURCE AND DESIGNATORD-8 MIL-M-38510
MEMORY	CTQX	CURRENT RATING PER CHARACTERISTIC160 00 MILLIAMPERES MAXIMUM SUPPLY
MEMORY	CWSG	TERMINAL SURFACE TREATMENTSOLDER
MEMORY	CZEN	VOLTAGE RATING AND TYPE PER CHARACTERISTIC7 0 VOLTS MAXIMUM POWER SOURCE
MEMORY	CZEQ	TIME RATING PER CHACTERISTIC100 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME LOW TO HIGH LEVEL OUTPUT AND 100 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME HIGH TO LOW LEVEL OUTPUT
MEMORY	CZER	MEMORY DEVICE TYPERAM
MEMORY	CZZZ	MEMORY CAPACITYUNKNOWN
MEMORY	TEST	TEST DATA DOCUMENT96906-MIL-STD-883 STANDARD INCLUDES INDUSTRY OR ASSOCIATION STANDARDS INDIVIDUAL MANUFACTUREER STANDARDS ETC
MEMORY	TTQY	TERMINAL TYPE AND QUANTITY20 PRINTED CIRCUIT