Quote for Part FR711-2082-552H (Microcircuit Memory) by Bae Systems Maritime Services with NSN 5962-01-246-8722

Mfg Part Number: FR711-2082-552H	Alternate P/N: FR7112082552H	NSN : 5962-01-246-8722
NIIN : 012468722	CAGE Code : K3902	Manufacturer: Bae Systems Maritime Services
Item Name : Microcircuit Memory	FSC : 5962 Microcircuits Electronic

Integrated AOG is your sourcing solution for all your NSN part FR711-2082-552H under 5962 Microcircuits Electronic needs, presenting NSN 5962-01-246-8722 by Bae Systems Maritime Services at competitive prices. This Microcircuit Memory NSN item is listed alongside the part number FR711-2082-552H, and it is readily available for purchase from our website at any time. If you would like to learn more about this item and receive a customized quote for your comparisons, fill out and submit an RFQ form as provided on our website at your earliest convenience. Please be sure to let us know details such as your target price and expected shipping time as this will allow us to tailor the best solution for your needs. With team members available for customer needs around the clock, we promise responses to quote requests within 15 minutes of receiving a completed form.

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NSN Information for Part Number FR711-2082-552H with NSN 5962-01-246-8722, 5962012468722

NSN	FSC	NIIN	CLS	Hazmat	DEMIL	Cancelled NSN
5962-01-246-8722 Item Description: Microcircuit Memory	5962	012468722	0	N	D
	CIIC	HCC	ESD	PMIC	Criticality	ENAC
	7		D	A	0
Part Number	ISC	RNVC	RNCC	HCC	MSDS	SADC
Fr711-2082-552h	3	2	5

Characteristics Data of NSN 5962-01-246-8722, 5962012468722

MRC	Criteria	Characteristic
MEMORY	ADAQ	BODY LENGTH2 096 INCHES MAXIMUM
MEMORY	ADAT	BODY WIDTH0 620 INCHES MAXIMUM
MEMORY	ADAU	BODY HEIGHT0 210 INCHES MAXIMUM
MEMORY	AEHX	MAXIMUM POWER DISSIPATION RATING1 0 WATTS
MEMORY	AFGA	OPERATING TEMP RANGE-55 0 TO 125 0 DEG CELSIUS
MEMORY	AFJQ	STORAGE TEMP RANGE-65 0 TO 150 0 DEG CELSIUS
MEMORY	CBBL	FEATURES PROVIDEDHERMETICALLY SEALED AND BURN IN AND PROGRAMMABLE AND MONOLITHIC
MEMORY	CQSJ	INCLOSURE MATERIALCERAMIC
MEMORY	CQSZ	INCLOSURE CONFIGURATIONDUAL-IN-LINE
MEMORY	CQWX	OUTPUT LOGIC FORMCOMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
MEMORY	CQZP	INPUT CIRCUIT PATTERN38 INPUT
MEMORY	CTFT	CASE OUTLINE SOURCE AND DESIGNATORD-5 MIL-M-38510
MEMORY	CTQX	CURRENT RATING PER CHARACTERISTIC10 00 MICROAMPERES NOMINAL TOTAL SUPPLY
MEMORY	CWSG	TERMINAL SURFACE TREATMENTSOLDER
MEMORY	CZEN	VOLTAGE RATING AND TYPE PER CHARACTERISTIC8 0 VOLTS MAXIMUM POWER SOURCE
MEMORY	CZEQ	TIME RATING PER CHACTERISTIC250 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME LOW TO HIGH LEVEL OUTPUT AND 250 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME HIGH TO LOW LEVEL OUTPUT
MEMORY	CZER	MEMORY DEVICE TYPEPAL
MEMORY	TEST	TEST DATA DOCUMENT14933-84066 DRAWING THIS IS THE BASIC GOVERNING DRAWING SUCH AS A CONTRACTOR DRAWING ORIGINAL EQUIPMENT MANUFACTURER DRAWING ETC EXCLUDES ANY SPECIFICATION STANDARD OR OTHER DOCUMENT THAT MAY BE REFERENCED IN A BASIC GOVERNING DRAWIN
MEMORY	TTQY	TERMINAL TYPE AND QUANTITY20 PRINTED CIRCUIT