Quote for Part P2114A-4 (Microcircuit Memory) by Intel Corporation with NSN 5962-01-116-5782

Mfg Part Number: P2114A-4	Alternate P/N: P2114A4	NSN : 5962-01-116-5782
NIIN : 011165782	CAGE Code : 34649	Manufacturer: Intel Corporation
Item Name : Microcircuit Memory	FSC : 5962 Microcircuits Electronic

Integrated AOG is your sourcing solution for all your NSN part P2114A-4 under 5962 Microcircuits Electronic needs, presenting NSN 5962-01-116-5782 by Intel Corporation at competitive prices. This Microcircuit Memory NSN item is listed alongside the part number P2114A-4, and it is readily available for purchase from our website at any time. If you would like to learn more about this item and receive a customized quote for your comparisons, fill out and submit an RFQ form as provided on our website at your earliest convenience. Please be sure to let us know details such as your target price and expected shipping time as this will allow us to tailor the best solution for your needs. With team members available for customer needs around the clock, we promise responses to quote requests within 15 minutes of receiving a completed form.

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NSN Information for Part Number P2114A-4 with NSN 5962-01-116-5782, 5962011165782

NSN	FSC	NIIN	CLS	Hazmat	DEMIL	Cancelled NSN
5962-01-116-5782 Item Description: Microcircuit Memory	5962	011165782	0	N	B
	CIIC	HCC	ESD	PMIC	Criticality	ENAC
	U			A	0
Part Number	ISC	RNVC	RNCC	HCC	MSDS	SADC
P2114a-4	3	9	3

Characteristics Data of NSN 5962-01-116-5782, 5962011165782

MRC	Criteria	Characteristic
MEMORY	ADAQ	BODY LENGTH0 895 INCHES MINIMUM AND 0 905 INCHES MAXIMUM
MEMORY	ADAT	BODY WIDTH0 245 INCHES MINIMUM AND 0 255 INCHES MAXIMUM
MEMORY	ADAU	BODY HEIGHT0 130 INCHES MINIMUM AND 0 140 INCHES MAXIMUM
MEMORY	AEHX	MAXIMUM POWER DISSIPATION RATING1 0 WATTS
MEMORY	AFGA	OPERATING TEMP RANGE-0 070 0 DEG CELSIUS
MEMORY	AFJQ	STORAGE TEMP RANGE-65 0150 0 DEG CELSIUS
MEMORY	AGAV	END ITEM IDENTIFICATION6930-01-102-2345 36378
MEMORY	CBBL	FEATURES PROVIDEDPROGRAMMABLE AND PROGRAMMED AND 3-STATE OUTPUT
MEMORY	CQSJ	INCLOSURE MATERIALPLASTIC
MEMORY	CQSZ	INCLOSURE CONFIGURATIONDUAL-IN-LINE
MEMORY	CQWX	OUTPUT LOGIC FORMN-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC
MEMORY	CQZP	INPUT CIRCUIT PATTERN16 INPUT
MEMORY	CRHL	BIT QUANTITY4096
MEMORY	CSWJ	WORD QUANTITY1024
MEMORY	CWSG	TERMINAL SURFACE TREATMENTSOLDER
MEMORY	CZEN	VOLTAGE RATING AND TYPE PER CHARACTERISTIC18 0 VOLTS MAXIMUM POWER SOURCE
MEMORY	CZEQ	TIME RATING PER CHACTERISTIC200 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME LOW TO HIGH LEVEL OUTPUT AND 200 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME HIGH TO LOW LEVEL OUTPUT
MEMORY	CZER	MEMORY DEVICE TYPERAM
MEMORY	TTQY	TERMINAL TYPE AND QUANTITY18 PRINTED CIRCUIT