Quote for Part JBP18S22MJ (Microcircuit Memory) by Texas Instruments Incorporated with NSN 5962-01-119-4703

Mfg Part Number: JBP18S22MJ	NSN : 5962-01-119-4703	NIIN : 011194703
CAGE Code : 01295	Manufacturer: Texas Instruments Incorporated	Item Name : Microcircuit Memory
FSC : 5962 Microcircuits Electronic

Integrated AOG is your sourcing solution for all your NSN part JBP18S22MJ under 5962 Microcircuits Electronic needs, presenting NSN 5962-01-119-4703 by Texas Instruments Incorporated at competitive prices. This Microcircuit Memory NSN item is listed alongside the part number JBP18S22MJ, and it is readily available for purchase from our website at any time. If you would like to learn more about this item and receive a customized quote for your comparisons, fill out and submit an RFQ form as provided on our website at your earliest convenience. Please be sure to let us know details such as your target price and expected shipping time as this will allow us to tailor the best solution for your needs. With team members available for customer needs around the clock, we promise responses to quote requests within 15 minutes of receiving a completed form.

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NSN Information for Part Number JBP18S22MJ with NSN 5962-01-119-4703, 5962011194703

NSN	FSC	NIIN	CLS	Hazmat	DEMIL	Cancelled NSN
5962-01-119-4703 Item Description: Microcircuit Memory	5962	011194703		N	B
	CIIC	HCC	ESD	PMIC	Criticality	ENAC
				A	0
Part Number	ISC	RNVC	RNCC	HCC	MSDS	SADC
Jbp18s22mj	3	9	5

Characteristics Data of NSN 5962-01-119-4703, 5962011194703

MRC	Criteria	Characteristic
MEMORY	ADAQ	BODY LENGTH0 930 INCHES MINIMUM AND 0 975 INCHES MAXIMUM
MEMORY	ADAT	BODY WIDTH0 245 INCHES MINIMUM AND 0 300 INCHES MAXIMUM
MEMORY	ADAU	BODY HEIGHT0 180 INCHES MAXIMUM
MEMORY	AEHX	MAXIMUM POWER DISSIPATION RATING550 0 MILLIWATTS
MEMORY	AFGA	OPERATING TEMP RANGE-55 0125 0 DEG CELSIUS
MEMORY	AFJQ	STORAGE TEMP RANGE-65 0150 0 DEG CELSIUS
MEMORY	CBBL	FEATURES PROVIDEDHERMETICALLY SEALED AND SCHOTTKY AND PROGRAMMABLE AND PROGRAMMED
MEMORY	CQSJ	INCLOSURE MATERIALCERAMIC AND GLASS
MEMORY	CQSZ	INCLOSURE CONFIGURATIONDUAL-IN-LINE
MEMORY	CQWX	OUTPUT LOGIC FORMTRANSISTOR-TRANSISTOR LOGIC
MEMORY	CQZP	INPUT CIRCUIT PATTERN10 INPUT
MEMORY	CRHL	BIT QUANTITY2048
MEMORY	CSWJ	WORD QUANTITY256
MEMORY	CWSG	TERMINAL SURFACE TREATMENTSOLDER
MEMORY	CZEN	VOLTAGE RATING AND TYPE PER CHARACTERISTIC-1 2 VOLTS MINIMUM POWER SOURCE AND 5 5 VOLTS MAXIMUM POWER SOURCE
MEMORY	CZEQ	TIME RATING PER CHACTERISTIC35 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME LOW TO HIGH LEVEL OUTPUT AND 35 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME HIGH TO LOW LEVEL OUTPUT
MEMORY	CZER	MEMORY DEVICE TYPEROM
MEMORY	TTQY	TERMINAL TYPE AND QUANTITY20 PRINTED CIRCUIT